TY - JOUR
T1 - Anisotropic in-plane lattice strain relaxation in brownmillerite SrFeO 2.5 epitaxial thin films
AU - Hirai, Kei
AU - Kan, Daisuke
AU - Aso, Ryotaro
AU - Ichikawa, Noriya
AU - Kurata, Hiroki
AU - Shimakawa, Yuichi
N1 - Funding Information:
We thank Takashi Saito for his experimental helps. This work was partially supported by Grants-in-Aid for Scientific Research (Grants No. 24760009 and 24540346), and a grant for the Joint Project of Chemical Synthesis Core Research Institutions from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The work was also supported by Japan Science and Technology Agency, CREST, and the Murata Science Foundation.
PY - 2013/8/7
Y1 - 2013/8/7
N2 - Anisotropic in-plane lattice relaxation behavior of brownmillerite SrFeO2.5 epitaxial thin films grown on (110) DyScO3 substrates was investigated. The in-plane lattices in the films less than 50 nm thick are fixed by the substrate lattice, whereas partial in-plane lattice relaxation along the [010] direction occurs in a 50 nm thick film. When the thickness reaches 98 nm, the film eventually exhibits lattice relaxation in both the [010] and the [10-1] in-plane directions. In the bottom region of the partially relaxed film, a dislocation, at which additional Fe atoms are seen, leads to formations of the stacking faults. In the surface region of the film, the complicated lattice defects propagated from the bottom result in the partial in-plane lattice relaxation associated with the disordered arrangements of the FeO4 tetrahedra and the FeO6 octahedra in the surface region. The preferential generation of the dislocations in the (10-1) plane can be explained by taking into account the anisotropic thermal expansion of SrFeO2.5, which results in the increase in the lattice mismatch between the film and the substrate only along the [010] direction in the cooling process after the film deposition.
AB - Anisotropic in-plane lattice relaxation behavior of brownmillerite SrFeO2.5 epitaxial thin films grown on (110) DyScO3 substrates was investigated. The in-plane lattices in the films less than 50 nm thick are fixed by the substrate lattice, whereas partial in-plane lattice relaxation along the [010] direction occurs in a 50 nm thick film. When the thickness reaches 98 nm, the film eventually exhibits lattice relaxation in both the [010] and the [10-1] in-plane directions. In the bottom region of the partially relaxed film, a dislocation, at which additional Fe atoms are seen, leads to formations of the stacking faults. In the surface region of the film, the complicated lattice defects propagated from the bottom result in the partial in-plane lattice relaxation associated with the disordered arrangements of the FeO4 tetrahedra and the FeO6 octahedra in the surface region. The preferential generation of the dislocations in the (10-1) plane can be explained by taking into account the anisotropic thermal expansion of SrFeO2.5, which results in the increase in the lattice mismatch between the film and the substrate only along the [010] direction in the cooling process after the film deposition.
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U2 - 10.1063/1.4817505
DO - 10.1063/1.4817505
M3 - Article
AN - SCOPUS:84882239524
SN - 0021-8979
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 5
M1 - 053514
ER -