Dielectric property of epitaxial SrBi 4Ti 4O 15 thin films with (001)-, (1110)-, (105)/(015)-, and (100)/(010)-orientations was investigated as a function of film thickness. As the tilting angle of c-axis from the surface normal is smaller, the relative dielectric constant begins to degrade at thinner thickness; eventually, the (001)-oriented films for which the c-axis is vertical to the substrate do not show noticeable degradation. The leakage current density also strongly depends of the tilting angle of the c-axis. The results indicate that the layer structure of SrBi 4Ti 4O 15 exhibits a small size effect with high insulation performance.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)