Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure

Takashi Kojima; Junichi Kimura; Muneyasu Suzuki; Kenji Takahashi; Takahiro Oikawa; Yukio Sakashita; Kazumi Kato; Takayuki Watanabe; Tadashi Takenaka; Tomoaki Yamada; Hiroshi Funakubo

doi:10.1063/1.4733326

Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure

Takashi Kojima, Junichi Kimura, Muneyasu Suzuki, Kenji Takahashi, Takahiro Oikawa, Yukio Sakashita, Kazumi Kato, Takayuki Watanabe, Tadashi Takenaka, Tomoaki Yamada, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Dielectric property of epitaxial SrBi ₄Ti ₄O ₁₅ thin films with (001)-, (1110)-, (105)/(015)-, and (100)/(010)-orientations was investigated as a function of film thickness. As the tilting angle of c-axis from the surface normal is smaller, the relative dielectric constant begins to degrade at thinner thickness; eventually, the (001)-oriented films for which the c-axis is vertical to the substrate do not show noticeable degradation. The leakage current density also strongly depends of the tilting angle of the c-axis. The results indicate that the layer structure of SrBi ₄Ti ₄O ₁₅ exhibits a small size effect with high insulation performance.

Original language	English
Article number	012907
Journal	Applied Physics Letters
Volume	101
Issue number	1
DOIs	https://doi.org/10.1063/1.4733326
Publication status	Published - Jul 2 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4733326

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title = "Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure",

abstract = "Dielectric property of epitaxial SrBi 4Ti 4O 15 thin films with (001)-, (1110)-, (105)/(015)-, and (100)/(010)-orientations was investigated as a function of film thickness. As the tilting angle of c-axis from the surface normal is smaller, the relative dielectric constant begins to degrade at thinner thickness; eventually, the (001)-oriented films for which the c-axis is vertical to the substrate do not show noticeable degradation. The leakage current density also strongly depends of the tilting angle of the c-axis. The results indicate that the layer structure of SrBi 4Ti 4O 15 exhibits a small size effect with high insulation performance.",

author = "Takashi Kojima and Junichi Kimura and Muneyasu Suzuki and Kenji Takahashi and Takahiro Oikawa and Yukio Sakashita and Kazumi Kato and Takayuki Watanabe and Tadashi Takenaka and Tomoaki Yamada and Hiroshi Funakubo",

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doi = "10.1063/1.4733326",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

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T1 - Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure

AU - Kojima, Takashi

AU - Kimura, Junichi

AU - Suzuki, Muneyasu

AU - Takahashi, Kenji

AU - Oikawa, Takahiro

AU - Sakashita, Yukio

AU - Kato, Kazumi

AU - Watanabe, Takayuki

AU - Takenaka, Tadashi

AU - Yamada, Tomoaki

AU - Funakubo, Hiroshi

PY - 2012/7/2

Y1 - 2012/7/2

N2 - Dielectric property of epitaxial SrBi 4Ti 4O 15 thin films with (001)-, (1110)-, (105)/(015)-, and (100)/(010)-orientations was investigated as a function of film thickness. As the tilting angle of c-axis from the surface normal is smaller, the relative dielectric constant begins to degrade at thinner thickness; eventually, the (001)-oriented films for which the c-axis is vertical to the substrate do not show noticeable degradation. The leakage current density also strongly depends of the tilting angle of the c-axis. The results indicate that the layer structure of SrBi 4Ti 4O 15 exhibits a small size effect with high insulation performance.

AB - Dielectric property of epitaxial SrBi 4Ti 4O 15 thin films with (001)-, (1110)-, (105)/(015)-, and (100)/(010)-orientations was investigated as a function of film thickness. As the tilting angle of c-axis from the surface normal is smaller, the relative dielectric constant begins to degrade at thinner thickness; eventually, the (001)-oriented films for which the c-axis is vertical to the substrate do not show noticeable degradation. The leakage current density also strongly depends of the tilting angle of the c-axis. The results indicate that the layer structure of SrBi 4Ti 4O 15 exhibits a small size effect with high insulation performance.

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Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure

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