Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect

Ryoi Ohashi, Ryota Nakai, Takehito Yokoyama, Yukio Tanaka, Kentaro Nomura

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We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, dI=dV was proportional to V1=ν with bias voltage V and ν = 1=2. By contrast, in the strong tunneling limit, dI=dV was expressed by (e2=h)2ν=(1 + ν) with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with ν = 5=2 and an integer quantum Hall state with ν = 3.

Original languageEnglish
Article number123703
Journaljournal of the physical society of japan
Issue number12
Publication statusPublished - Dec 15 2022

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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