Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

Hyunwoong Seo; Daiki Ichida; Giichiro Uchida; Kunihiro Kamataki; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.1007/s12541-014-0343-8

Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO₂ network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO₂ paste. For better performance, thickness of Si-TiO₂ layer was varied by coating times and Si-TiO₂ films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO₂ film had the best performance with the smallest internal impedance and the highest photon to current efficiency.

Original language	English
Pages (from-to)	339-343
Number of pages	5
Journal	International Journal of Precision Engineering and Manufacturing
Volume	15
Issue number	2
DOIs	https://doi.org/10.1007/s12541-014-0343-8
Publication status	Published - Feb 1 2014

All Science Journal Classification (ASJC) codes

Mechanical Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1007/s12541-014-0343-8

Cite this

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title = "Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells",

abstract = "This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.",

author = "Hyunwoong Seo and Daiki Ichida and Giichiro Uchida and Kunihiro Kamataki and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",

note = "Funding Information: This work was supported by MEXT KAKENHI Grant Number 211 10005. Publisher Copyright: {\textcopyright} 2014, Korean Society for Precision Engineering and Springer-Verlag Berlin Heidelberg.",

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T1 - Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

AU - Seo, Hyunwoong

AU - Ichida, Daiki

AU - Uchida, Giichiro

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2014/2/1

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N2 - This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.

AB - This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.

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Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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