TY - JOUR
T1 - Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation
AU - Gao, B.
AU - Chen, X. J.
AU - Nakano, S.
AU - Nishizawa, S.
AU - Kakimoto, K.
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research (B) 19360012 and a grant-in-aid for the creation of innovation through business-academy-public sector cooperation from the Japanese Ministry of Education, Science, Sports and Culture .
PY - 2010/11/1
Y1 - 2010/11/1
N2 - A fully coupled compressible multi-phase flow solver was developed to effectively design a large furnace for producing large-size SiC crystals. Compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect are included. A small and experimental furnace is used to validate the solver. First, the essentiality of 2D flow calculation and the significance of incorporating buoyancy effect and gas convection, the Stefan effect, and flow interaction between argon gas and species were investigated by numerical results. Then the effects of argon gas on deposition rate, growth rate, graphitization on the powder source, and supersaturation and stoichiometry on the seed were analyzed. Finally, the advantages of an extra chamber design were explained, and improvement of growth rate was validated by the present solver.
AB - A fully coupled compressible multi-phase flow solver was developed to effectively design a large furnace for producing large-size SiC crystals. Compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect are included. A small and experimental furnace is used to validate the solver. First, the essentiality of 2D flow calculation and the significance of incorporating buoyancy effect and gas convection, the Stefan effect, and flow interaction between argon gas and species were investigated by numerical results. Then the effects of argon gas on deposition rate, growth rate, graphitization on the powder source, and supersaturation and stoichiometry on the seed were analyzed. Finally, the advantages of an extra chamber design were explained, and improvement of growth rate was validated by the present solver.
UR - http://www.scopus.com/inward/record.url?scp=77957824871&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957824871&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.08.032
DO - 10.1016/j.jcrysgro.2010.08.032
M3 - Article
AN - SCOPUS:77957824871
SN - 0022-0248
VL - 312
SP - 3349
EP - 3355
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 22
ER -