Analysis of inhomogeneous dislocation distribution in multicrystalline Si

J. Chen; R. R. Prakash; J. Y. Li; K. Jiptner; Y. Miyamura; H. Harada; A. Ogura; T. Sekiguchi

doi:10.4028/www.scientific.net/SSP.205-206.77

Analysis of inhomogeneous dislocation distribution in multicrystalline Si

J. Chen, R. R. Prakash, J. Y. Li, K. Jiptner, Y. Miyamura, H. Harada, A. Ogura, T. Sekiguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XV
Publisher	Trans Tech Publications Ltd
Pages	77-82
Number of pages	6
ISBN (Print)	9783037858240
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.205-206.77
Publication status	Published - 2014
Externally published	Yes
Event	15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom Duration: Sept 22 2013 → Sept 27 2013

Publication series

Name	Solid State Phenomena
Volume	205-206
ISSN (Print)	1012-0394

Other

Other	15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Country/Territory	United Kingdom
City	Oxford
Period	9/22/13 → 9/27/13

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.4028/www.scientific.net/SSP.205-206.77

Cite this

Chen, J., Prakash, R. R., Li, J. Y., Jiptner, K., Miyamura, Y., Harada, H., Ogura, A., & Sekiguchi, T. (2014). Analysis of inhomogeneous dislocation distribution in multicrystalline Si. In Gettering and Defect Engineering in Semiconductor Technology XV (pp. 77-82). (Solid State Phenomena; Vol. 205-206). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.205-206.77

Chen, J, Prakash, RR, Li, JY, Jiptner, K, Miyamura, Y, Harada, H, Ogura, A & Sekiguchi, T 2014, Analysis of inhomogeneous dislocation distribution in multicrystalline Si. in Gettering and Defect Engineering in Semiconductor Technology XV. Solid State Phenomena, vol. 205-206, Trans Tech Publications Ltd, pp. 77-82, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, Oxford, United Kingdom, 9/22/13. https://doi.org/10.4028/www.scientific.net/SSP.205-206.77

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title = "Analysis of inhomogeneous dislocation distribution in multicrystalline Si",

abstract = "Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.",

author = "J. Chen and Prakash, {R. R.} and Li, {J. Y.} and K. Jiptner and Y. Miyamura and H. Harada and A. Ogura and T. Sekiguchi",

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doi = "10.4028/www.scientific.net/SSP.205-206.77",

language = "English",

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series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

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AU - Harada, H.

AU - Ogura, A.

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AB - Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.

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BT - Gettering and Defect Engineering in Semiconductor Technology XV

PB - Trans Tech Publications Ltd

T2 - 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013

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ER -

Analysis of inhomogeneous dislocation distribution in multicrystalline Si

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

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