TY - GEN
T1 - Analysis of growth velocity of SiC growth by the physical vapor transport method
AU - Kakimoto, Koichi
AU - Gao, Bing
AU - Shiramomo, Takuya
AU - Nakano, Satoshi
AU - Nishizawa, Shin Ichi
PY - 2012/5/28
Y1 - 2012/5/28
N2 - Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2.
AB - Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2.
UR - http://www.scopus.com/inward/record.url?scp=84861390428&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861390428&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.717-720.25
DO - 10.4028/www.scientific.net/MSF.717-720.25
M3 - Conference contribution
AN - SCOPUS:84861390428
SN - 9783037854198
T3 - Materials Science Forum
SP - 25
EP - 28
BT - Silicon Carbide and Related Materials 2011, ICSCRM 2011
T2 - 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Y2 - 11 September 2011 through 16 September 2011
ER -