Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

Takeshi Mizoguchi; Toshiyuki Naka; Yuta Tanimoto; Yasuhiro Okada; Wataru Saito; Mitiko Miura-Mattausch; Hans Jurgen Mattausch

doi:10.1109/ISPSD.2016.7520829

Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jurgen Mattausch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of a boost converter circuit, enabled through separate extraction of the parasitic FP contributions. In addition, physical trap-density modeling is verified to be also of key importance for accurate prediction of the power efficiency.

Original language	English
Title of host publication	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	267-270
Number of pages	4
ISBN (Electronic)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520829
Publication status	Published - Jul 25 2016
Externally published	Yes
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: Jun 12 2016 → Jun 16 2016

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2016-July
ISSN (Print)	1063-6854

Conference

Conference	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country/Territory	Czech Republic
City	Prague
Period	6/12/16 → 6/16/16

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2016.7520829

Cite this

Mizoguchi, T., Naka, T., Tanimoto, Y., Okada, Y., Saito, W., Miura-Mattausch, M., & Mattausch, H. J. (2016). Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 267-270). Article 7520829 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520829

Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions. / Mizoguchi, Takeshi; Naka, Toshiyuki; Tanimoto, Yuta et al.
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 267-270 7520829 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mizoguchi, T, Naka, T, Tanimoto, Y, Okada, Y, Saito, W, Miura-Mattausch, M & Mattausch, HJ 2016, Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520829, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 267-270, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 6/12/16. https://doi.org/10.1109/ISPSD.2016.7520829

Mizoguchi T, Naka T, Tanimoto Y, Okada Y, Saito W, Miura-Mattausch M et al. Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 267-270. 7520829. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2016.7520829

Mizoguchi, Takeshi ; Naka, Toshiyuki ; Tanimoto, Yuta et al. / Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 267-270 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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abstract = "In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of a boost converter circuit, enabled through separate extraction of the parasitic FP contributions. In addition, physical trap-density modeling is verified to be also of key importance for accurate prediction of the power efficiency.",

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AB - In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of a boost converter circuit, enabled through separate extraction of the parasitic FP contributions. In addition, physical trap-density modeling is verified to be also of key importance for accurate prediction of the power efficiency.

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Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

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