Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Takuya Hoshii, Akira Nakajima, Shin Ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui

    Research output: Contribution to journalArticlepeer-review

    Abstract

    GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.

    Original languageEnglish
    Article number061006
    JournalJapanese journal of applied physics
    Volume58
    Issue number6
    DOIs
    Publication statusPublished - 2019

    All Science Journal Classification (ASJC) codes

    • General Engineering
    • General Physics and Astronomy

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