An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

M. Okamoto; K. Kakushima; Y. Kataoka; A. Nishiyama; N. Sugii; H. Wakabayashi; K. Tsutsui; H. Iwai; W. Saito

doi:10.1109/WiPDA.2013.6695586

An ohmic contact process for AlGaN/GaN structures using TiSi₂ electrodes

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report an Ohmic contact process using TiSi₂ electrodes for contact metals on AlGaN/GaN structures. TiSi₂ films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi₂ can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.

Original language	English
Title of host publication	1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
Pages	159-161
Number of pages	3
DOIs	https://doi.org/10.1109/WiPDA.2013.6695586
Publication status	Published - 2013
Externally published	Yes
Event	1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, United States Duration: Oct 27 2013 → Oct 29 2013

Publication series

Name	1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

Other

Other	1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
Country/Territory	United States
City	Columbus, OH
Period	10/27/13 → 10/29/13

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/WiPDA.2013.6695586

Cite this

Okamoto, M., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Iwai, H., & Saito, W. (2013). An ohmic contact process for AlGaN/GaN structures using TiSi₂ electrodes. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings (pp. 159-161). Article 6695586 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695586

An ohmic contact process for AlGaN/GaN structures using TiSi₂ electrodes. / Okamoto, M.; Kakushima, K.; Kataoka, Y. et al.
1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 159-161 6695586 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Okamoto, M, Kakushima, K, Kataoka, Y, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Iwai, H & Saito, W 2013, An ohmic contact process for AlGaN/GaN structures using TiSi₂ electrodes. in 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings., 6695586, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, pp. 159-161, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013, Columbus, OH, United States, 10/27/13. https://doi.org/10.1109/WiPDA.2013.6695586

Okamoto M, Kakushima K, Kataoka Y, Nishiyama A, Sugii N, Wakabayashi H et al. An ohmic contact process for AlGaN/GaN structures using TiSi₂ electrodes. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 159-161. 6695586. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). doi: 10.1109/WiPDA.2013.6695586

@inproceedings{639c4c16fe5840c985202ce24e90f550,

title = "An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes",

abstract = "We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi2 can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.",

author = "M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito",

year = "2013",

doi = "10.1109/WiPDA.2013.6695586",

language = "English",

isbn = "9781479911943",

series = "1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings",

pages = "159--161",

booktitle = "1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings",

note = "1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 ; Conference date: 27-10-2013 Through 29-10-2013",

}

TY - GEN

T1 - An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

AU - Okamoto, M.

AU - Kakushima, K.

AU - Kataoka, Y.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Wakabayashi, H.

AU - Tsutsui, K.

AU - Iwai, H.

AU - Saito, W.

PY - 2013

Y1 - 2013

N2 - We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi2 can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.

AB - We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi2 can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.

UR - http://www.scopus.com/inward/record.url?scp=84893562736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893562736&partnerID=8YFLogxK

U2 - 10.1109/WiPDA.2013.6695586

DO - 10.1109/WiPDA.2013.6695586

M3 - Conference contribution

AN - SCOPUS:84893562736

SN - 9781479911943

T3 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

SP - 159

EP - 161

BT - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

T2 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013

Y2 - 27 October 2013 through 29 October 2013

ER -