An N2-compatible Ni0 metal-organic chemical vapor deposition (MOCVD) precursor

Viet Ha Tran; Takeshi Yatabe; Takahiro Matsumoto; Hidetaka Nakai; Kazuharu Suzuki; Takao Enomoto; Seiji Ogo

doi:10.1246/cl.150155

An N₂-compatible Ni⁰ metal-organic chemical vapor deposition (MOCVD) precursor

Viet Ha Tran, Takeshi Yatabe, Takahiro Matsumoto, Hidetaka Nakai, Kazuharu Suzuki, Takao Enomoto, Seiji Ogo

Research output: Contribution to journal › Article › peer-review

Abstract

We report the first example of a Ni⁰ precursor that provides a contamination-free (<1%) nickel film by metal-organic chemical vapor deposition (MOCVD) using N₂ as the carrier gas. The structure and physical properties of the Ni₀ precursor and subsequent film are described.

Original language	English
Pages (from-to)	794-796
Number of pages	3
Journal	Chemistry Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1246/cl.150155
Publication status	Published - Jan 1 2015

All Science Journal Classification (ASJC) codes

Chemistry(all)

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10.1246/cl.150155

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title = "An N2-compatible Ni0 metal-organic chemical vapor deposition (MOCVD) precursor",

abstract = "We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal-organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.",

author = "Tran, {Viet Ha} and Takeshi Yatabe and Takahiro Matsumoto and Hidetaka Nakai and Kazuharu Suzuki and Takao Enomoto and Seiji Ogo",

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doi = "10.1246/cl.150155",

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journal = "Chemistry Letters",

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AU - Tran, Viet Ha

AU - Yatabe, Takeshi

AU - Matsumoto, Takahiro

AU - Nakai, Hidetaka

AU - Suzuki, Kazuharu

AU - Enomoto, Takao

AU - Ogo, Seiji

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal-organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.

AB - We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal-organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.

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DO - 10.1246/cl.150155

M3 - Article

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JO - Chemistry Letters

JF - Chemistry Letters

IS - 6

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An N₂-compatible Ni⁰ metal-organic chemical vapor deposition (MOCVD) precursor

Abstract

All Science Journal Classification (ASJC) codes

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