An eight-phase CMOS injection locked ring oscillator with low phase noise

K. Yousef; H. Jia; A. Allam; A. Anand; R. Pokharel; T. Kaho

doi:10.1109/ICUWB.2014.6959003

An eight-phase CMOS injection locked ring oscillator with low phase noise

K. Yousef, H. Jia, A. Allam, A. Anand, R. Pokharel, T. Kaho

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

This paper presents the design of a low DC power, low phase noise single-ended ring oscillator (RO) in 0.18 μm CMOS technology. It introduces a new RO output phase control technique. This RO uses a voltage pull-down circuit to produce different output signal phases. The proposed RO employs the pulse injection (PI) technique for phase noise and spurious signals suppression. The proposed injection locked ring oscillator (ILRO) can be used for phase shift keying (PSK) implementation. The proposed ILRO has an oscillation frequency of 4.5 GHz with a fine tuning range of 540 MHz. It consumes only a 4.25 mW of power while having a phase noise of-130.9 dBc/Hz @ 1MHz offset. Through this ILRO design, a figure of merit (FoM) of-197.68 dBc/Hz has been achieved.

Original language	English
Title of host publication	Proceedings - IEEE International Conference on Ultra-Wideband
Publisher	IEEE Computer Society
Pages	337-340
Number of pages	4
ISBN (Electronic)	9781479953967
DOIs	https://doi.org/10.1109/ICUWB.2014.6959003
Publication status	Published - Nov 14 2014
Event	2014 IEEE International Conference on Ultra-WideBand, ICUWB 2014 - Paris, France Duration: Sept 1 2014 → Sept 3 2014

Publication series

Name	Proceedings - IEEE International Conference on Ultra-Wideband
ISSN (Print)	2162-6588
ISSN (Electronic)	2162-6596

Other

Other	2014 IEEE International Conference on Ultra-WideBand, ICUWB 2014
Country/Territory	France
City	Paris
Period	9/1/14 → 9/3/14

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering
Communication

Access to Document

10.1109/ICUWB.2014.6959003

Cite this

Yousef, K., Jia, H., Allam, A., Anand, A., Pokharel, R., & Kaho, T. (2014). An eight-phase CMOS injection locked ring oscillator with low phase noise. In Proceedings - IEEE International Conference on Ultra-Wideband (pp. 337-340). Article 6959003 (Proceedings - IEEE International Conference on Ultra-Wideband). IEEE Computer Society. https://doi.org/10.1109/ICUWB.2014.6959003

An eight-phase CMOS injection locked ring oscillator with low phase noise. / Yousef, K.; Jia, H.; Allam, A. et al.
Proceedings - IEEE International Conference on Ultra-Wideband. IEEE Computer Society, 2014. p. 337-340 6959003 (Proceedings - IEEE International Conference on Ultra-Wideband).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yousef, K, Jia, H, Allam, A, Anand, A, Pokharel, R & Kaho, T 2014, An eight-phase CMOS injection locked ring oscillator with low phase noise. in Proceedings - IEEE International Conference on Ultra-Wideband., 6959003, Proceedings - IEEE International Conference on Ultra-Wideband, IEEE Computer Society, pp. 337-340, 2014 IEEE International Conference on Ultra-WideBand, ICUWB 2014, Paris, France, 9/1/14. https://doi.org/10.1109/ICUWB.2014.6959003

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abstract = "This paper presents the design of a low DC power, low phase noise single-ended ring oscillator (RO) in 0.18 μm CMOS technology. It introduces a new RO output phase control technique. This RO uses a voltage pull-down circuit to produce different output signal phases. The proposed RO employs the pulse injection (PI) technique for phase noise and spurious signals suppression. The proposed injection locked ring oscillator (ILRO) can be used for phase shift keying (PSK) implementation. The proposed ILRO has an oscillation frequency of 4.5 GHz with a fine tuning range of 540 MHz. It consumes only a 4.25 mW of power while having a phase noise of-130.9 dBc/Hz @ 1MHz offset. Through this ILRO design, a figure of merit (FoM) of-197.68 dBc/Hz has been achieved.",

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An eight-phase CMOS injection locked ring oscillator with low phase noise

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