Abstract
Amorphization of silicon crystals irradiated with low-energy (10-25 keV) Ar+ beams at temperature in the range of 30-600°C has been studied. Thickness of the damaged layer was estimated by the ion-bombardment-enhanced selective etching (IBESE) technique. Critical dose for the amorphization was estimated to be ∼ 5 × 1013 ions/cm2 for irradiation of 10 and 20 keV Ar+ at 30°C. Comparison between the damaged layer thickness and results of the TRIM simulation shows that the etching stops at the depth where density of the deposited energy is a constant value. For irradiation temperature of 380°C and 400°C, no amorphized layer was observed after irradiation with 20 keV Ar+ to dose of 5 × 1014 and 2 × 1015 ions/cm2, respectively. The damaged layers disappeared after annealing at temperature above 400°C, and activation energy for the recovery was estimated to be 0.33 eV. From the value of the activation energy, we speculate that the recovery process of radiation-induced defects should be controlled by migration of vacancies.
| Original language | English |
|---|---|
| Pages (from-to) | 163-166 |
| Number of pages | 4 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 2 |
| Issue number | 1 |
| Publication status | Published - Mar 1997 |
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering