Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	847-848
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2018.ps-1-12
Publication status	Published - Sept 13 2018
Event	2018 International Conference on Solid State Devices and Materials (SSDM2018) - University of Tokyo, Tokyo, Japan Duration: Sept 9 2018 → Sept 13 2018

Conference	2018 International Conference on Solid State Devices and Materials (SSDM2018)
Country/Territory	Japan
City	Tokyo
Period	9/9/18 → 9/13/18

Access to Document

Yamamoto, K, Nakae, K, Wang, D, Nakashima, H, Xue, Z, Zhang, M & Di, Z 2018, 'Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator', Paper presented at 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, Japan, 9/9/18 - 9/13/18 pp. 847-848. https://doi.org/10.7567/ssdm.2018.ps-1-12

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title = "Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator",

author = "K. Yamamoto and K. Nakae and D. Wang and H. Nakashima and Z. Xue and M. Zhang and Z. Di",

year = "2018",

month = sep,

day = "13",

doi = "10.7567/ssdm.2018.ps-1-12",

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note = "2018 International Conference on Solid State Devices and Materials (SSDM2018) ; Conference date: 09-09-2018 Through 13-09-2018",

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T1 - Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator

AU - Yamamoto, K.

AU - Nakae, K.

AU - Wang, D.

AU - Nakashima, H.

AU - Xue, Z.

AU - Zhang, M.

AU - Di, Z.

PY - 2018/9/13

Y1 - 2018/9/13

U2 - 10.7567/ssdm.2018.ps-1-12

DO - 10.7567/ssdm.2018.ps-1-12

M3 - Paper

SP - 847

EP - 848

T2 - 2018 International Conference on Solid State Devices and Materials (SSDM2018)

Y2 - 9 September 2018 through 13 September 2018

ER -