Ambipolar carrier transport in polycrystalline pentacene thin-film transistors

We have investigated the dependence of polycrystalline pentacene thin-film transistors (TFTs) characteristics on work function of source-drain contact metals. The pentacene TFTs using Mg, Al, Ag, and Au source-drain electrodes showed only p-type characteristics and the field-effect hole mobilities were strongly dependent on their work function. On the other hand, the pentacene TFTs using Ca source-drain electrodes showed typical ambipolar characteristics. The field-effect hole mobility of 4.5 × 10 -4 cm 2 /Vs and field-effect electron mobility of 2.7 × 10 -5 cm 2 /Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene TFTs was ascribed to the lowering of barrier for electron injection at source electrodes.