Abstract
A copolymer of methyl methacrylate (MMA) and 3-triethoxysilylpropyl methacrylate (ESPMA) was proposed as a positive-working electron beam (EB) resist of a new type. It was found that it had 4-10 times the resistance of polymethylmethacrylate (PMMA) against CBrF3 plasma damage. The mechanism of etching Nb in reactive-ion-etching (RIE) was deciphered. Using the new EB resist and nanometer process technology, an all-Nb thin film microbridge was fabricated. It shows the a.c. Josephson effect, i.e. the Shapiro steps upto the 11th were observed under millimeter-wave (70 GHz) radiation. In addition the coherently working performance of the series array of these thin-film microbridges were observed definitively.
Original language | English |
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Pages (from-to) | 445-455 |
Number of pages | 11 |
Journal | Infrared Physics |
Volume | 34 |
Issue number | 5 |
DOIs | |
Publication status | Published - Oct 1993 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)