TY - GEN
T1 - Aligned growth of ZnO nanowires by laser ablation and their applications
AU - Okada, Tatsuo
AU - Guo, Ruiqian
AU - Nishimura, Jun
AU - Matsumoto, Masato
AU - Higashihata, M.
AU - Nakamura, D.
PY - 2008
Y1 - 2008
N2 - Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet photo-sensor, field emitters and an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.
AB - Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet photo-sensor, field emitters and an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.
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U2 - 10.2351/1.5057134
DO - 10.2351/1.5057134
M3 - Conference contribution
AN - SCOPUS:77953211981
SN - 9780912035895
T3 - 3rd Pacific International Conference on Applications of Lasers and Optics, PICALO 2008 - Conference Proceedings
SP - 825
EP - 829
BT - 3rd Pacific International Conference on Applications of Lasers and Optics, PICALO 2008 - Conference Proceedings
PB - Laser Institute of America
T2 - 3rd Pacific International Conference on Applications of Lasers and Optics, PICALO 2008
Y2 - 16 April 2008 through 18 April 2008
ER -