Aligned carbon nanotube film self-organized on a SiC wafer

M. Kusunoki, J. Shibata, M. Rokkaku, T. Hirayama

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64 Citations (Scopus)


An aligned carbon nanotube film was fabricated on the surface of an α-SiC wafer by heating at 1700°C for 30 min, in a vacuum electric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film on the SiC substrate. The (0002) lattice distance of graphite constructing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.

Original languageEnglish
Pages (from-to)L605-L606
JournalJapanese Journal of Applied Physics
Issue number5 B
Publication statusPublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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