Aligned carbon nanotube film self-organized on a SiC wafer

M. Kusunoki; J. Shibata; M. Rokkaku; T. Hirayama

doi:10.1143/jjap.37.l605

Aligned carbon nanotube film self-organized on a SiC wafer

M. Kusunoki, J. Shibata, M. Rokkaku, T. Hirayama

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

An aligned carbon nanotube film was fabricated on the surface of an α-SiC wafer by heating at 1700°C for 30 min, in a vacuum electric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film on the SiC substrate. The (0002) lattice distance of graphite constructing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.

Original language	English
Pages (from-to)	L605-L606
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.37.l605
Publication status	Published - 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "An aligned carbon nanotube film was fabricated on the surface of an α-SiC wafer by heating at 1700°C for 30 min, in a vacuum electric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film on the SiC substrate. The (0002) lattice distance of graphite constructing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.",

author = "M. Kusunoki and J. Shibata and M. Rokkaku and T. Hirayama",

year = "1998",

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AU - Kusunoki, M.

AU - Shibata, J.

AU - Rokkaku, M.

AU - Hirayama, T.

PY - 1998

Y1 - 1998

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Aligned carbon nanotube film self-organized on a SiC wafer

Abstract

All Science Journal Classification (ASJC) codes

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