Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

M. Watanabe; N. Shigyo; T. Hoshii; K. Furukawa; K. Kakushima; K. Satoh; T. Matsudai; T. Saraya; T. Takakura; I. Muneta; H. Wakabayashi; A. Nakajima; S. Nishizawa; K. Tsutsui; T. Hiramoto; H. Ohashi; H. Iwai

doi:10.1109/EDTM50988.2021.9420922

Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

Original language	English
Title of host publication	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728181769
DOIs	https://doi.org/10.1109/EDTM50988.2021.9420922
Publication status	Published - Apr 8 2021
Event	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China Duration: Apr 8 2021 → Apr 11 2021

Publication series

Name	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/Territory	China
City	Chengdu
Period	4/8/21 → 4/11/21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM50988.2021.9420922

Cite this

Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., & Iwai, H. (2021). Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 Article 9420922 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM50988.2021.9420922

Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. / Watanabe, M.; Shigyo, N.; Hoshii, T. et al.
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9420922 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, M, Shigyo, N, Hoshii, T, Furukawa, K, Kakushima, K, Satoh, K, Matsudai, T, Saraya, T, Takakura, T, Muneta, I, Wakabayashi, H, Nakajima, A, Nishizawa, S, Tsutsui, K, Hiramoto, T, Ohashi, H & Iwai, H 2021, Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. in 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021., 9420922, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Institute of Electrical and Electronics Engineers Inc., 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Chengdu, China, 4/8/21. https://doi.org/10.1109/EDTM50988.2021.9420922

Watanabe M, Shigyo N, Hoshii T, Furukawa K, Kakushima K, Satoh K et al. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9420922. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). doi: 10.1109/EDTM50988.2021.9420922

Watanabe, M. ; Shigyo, N. ; Hoshii, T. et al. / Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

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title = "Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices",

abstract = "Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.",

author = "M. Watanabe and N. Shigyo and T. Hoshii and K. Furukawa and K. Kakushima and K. Satoh and T. Matsudai and T. Saraya and T. Takakura and I. Muneta and H. Wakabayashi and A. Nakajima and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai",

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doi = "10.1109/EDTM50988.2021.9420922",

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AU - Watanabe, M.

AU - Shigyo, N.

AU - Hoshii, T.

AU - Furukawa, K.

AU - Kakushima, K.

AU - Satoh, K.

AU - Matsudai, T.

AU - Saraya, T.

AU - Takakura, T.

AU - Muneta, I.

AU - Wakabayashi, H.

AU - Nakajima, A.

AU - Nishizawa, S.

AU - Tsutsui, K.

AU - Hiramoto, T.

AU - Ohashi, H.

AU - Iwai, H.

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N2 - Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

AB - Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

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BT - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

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Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

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