Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses

Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    GaN high electron mobility transistors (HEMTs) have limited avalanche capability and withstand the surge energy through capacitive charging, which often causes significant voltage overshoot up to their catastrophic limit. This work explores the parametric shift and recovery of a commercial Schottky-type, p-gate GaN HEMT under repetitive, overvoltage switching stresses near its dynamic breakdown voltage. In particular, the device recovery under various temperatures is comprehensively studied, which allows the identification of the de-trapping dynamics and dominant trap energy levels for the first time. Devices were stressed in a clamped inductive switching circuit with 1-million surge energy cycles with a voltage overshoot reaching 1300 V. The parametric shifts showed a saturation and were found to be caused by holes generated in impact ionization. The device recovery was found to be accelerated by elevated ambient temperatures, and a hole-trap energy level of 0.52 eV was identified to dominate the parametric shift and recovery. These results suggest the significance of hole dynamics on the overvoltage robustness of p-gate GaN HEMTs near their dynamic breakdown voltage.

    Original languageEnglish
    Title of host publication2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    PagesP221-P225
    ISBN (Electronic)9781665479509
    DOIs
    Publication statusPublished - 2022
    Event2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
    Duration: Mar 27 2022Mar 31 2022

    Publication series

    NameIEEE International Reliability Physics Symposium Proceedings
    Volume2022-March
    ISSN (Print)1541-7026

    Conference

    Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
    Country/TerritoryUnited States
    CityDallas
    Period3/27/223/31/22

    All Science Journal Classification (ASJC) codes

    • General Engineering

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