ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.

K. Miyahara; M. Mukaida; M. Tokumitsu; S. Kubo; K. Hohkawa

ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.

K. Miyahara, M. Mukaida, M. Tokumitsu, S. Kubo, K. Hohkawa

Research output: Contribution to journal › Article › peer-review

Abstract

Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.

Original language	English
Journal	IEEE Transactions on Magnetics
Volume	MAG-23
Issue number	2
Publication status	Published - 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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abstract = "Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.",

author = "K. Miyahara and M. Mukaida and M. Tokumitsu and S. Kubo and K. Hohkawa",

year = "1987",

language = "English",

volume = "MAG-23",

journal = "IEEE Transactions on Magnetics",

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T1 - ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.

AU - Miyahara, K.

AU - Mukaida, M.

AU - Tokumitsu, M.

AU - Kubo, S.

AU - Hohkawa, K.

PY - 1987

Y1 - 1987

N2 - Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.

AB - Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.

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ER -

ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.

Abstract

All Science Journal Classification (ASJC) codes

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