TY - GEN
T1 - A60-GHz double-Y balun-fed on-chip Vivaldi antenna with improved gain
AU - El-Hameed, Anwer S.Abd
AU - Barakat, Adel
AU - Abdel-Rahman, Adel B.
AU - Allam, Ahmed
AU - Pokharel, Ramesh
PY - 2016/3/21
Y1 - 2016/3/21
N2 - A60-GHz double-Y balun-fed exponential tapered slot Vivaldi antenna-on-chip (AOC) is designed using standard 0.18μm six metal-layer CMOS technology. A double-Y balun feeding structure is used to make transition from coplanar to slot line. Three methods are developed for improving antenna radiation properties. First, an impeding longitudinal rectangular slits on the backed edge of the Vivaldi antenna are used to enhance the gain. Second, loading circular metal-strips are used as additional director into the slot area of Vivaldi antenna on M6. Finally, a planar arc reflector is used to inhibit the back lobe, contributing to the enhancement of gain and efficiency. The overall antenna size is very compact and equal to 700um × 940μm. The influence of the antenna position on the radiation properties is also studied. The proposed antenna offers a simulated peak gain and a radiation efficiency of-1.9 dBi and 24%, respectively.
AB - A60-GHz double-Y balun-fed exponential tapered slot Vivaldi antenna-on-chip (AOC) is designed using standard 0.18μm six metal-layer CMOS technology. A double-Y balun feeding structure is used to make transition from coplanar to slot line. Three methods are developed for improving antenna radiation properties. First, an impeding longitudinal rectangular slits on the backed edge of the Vivaldi antenna are used to enhance the gain. Second, loading circular metal-strips are used as additional director into the slot area of Vivaldi antenna on M6. Finally, a planar arc reflector is used to inhibit the back lobe, contributing to the enhancement of gain and efficiency. The overall antenna size is very compact and equal to 700um × 940μm. The influence of the antenna position on the radiation properties is also studied. The proposed antenna offers a simulated peak gain and a radiation efficiency of-1.9 dBi and 24%, respectively.
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U2 - 10.1109/ICM.2015.7438050
DO - 10.1109/ICM.2015.7438050
M3 - Conference contribution
T3 - Proceedings of the International Conference on Microelectronics, ICM
SP - 307
EP - 310
BT - 2015 27th International Conference on Microelectronics, ICM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th International Conference on Microelectronics, ICM 2015
Y2 - 20 December 2015 through 23 December 2015
ER -