A1N epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Tomohiko Shibata, Keiichiro Asai, Yukinori Nakamura, Mitsuhiro Tanaka, Kazuyuki Kaigawa, Junko Shibata, Hiroaki Sakai

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45 Citations (Scopus)


A-plane (1 2 10) A1N films were deposited on the off-angle R-plane (1 1 0 2) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects. The polar direction of the A1N film was inverted by changing the sign of the off-angle and the off-angle was effective in restraining the generation of inverted twins in the A1N. A minus off-angle was found to improve total crystal quality of the A1N from X-ray diffraction results. High-resolution transmission electron microscopy images in the vicinity of interfaces between the A1N and the sapphire indicated that atomic arrangement at an initial A1N growth stage influenced the total crystal quality.

Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - Jul 2 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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