A1N epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Tomohiko Shibata; Keiichiro Asai; Yukinori Nakamura; Mitsuhiro Tanaka; Kazuyuki Kaigawa; Junko Shibata; Hiroaki Sakai

doi:10.1016/S0022-0248(01)01051-X

A1N epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Tomohiko Shibata, Keiichiro Asai, Yukinori Nakamura, Mitsuhiro Tanaka, Kazuyuki Kaigawa, Junko Shibata, Hiroaki Sakai

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

A-plane (1 2 10) A1N films were deposited on the off-angle R-plane (1 1 0 2) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects. The polar direction of the A1N film was inverted by changing the sign of the off-angle and the off-angle was effective in restraining the generation of inverted twins in the A1N. A minus off-angle was found to improve total crystal quality of the A1N from X-ray diffraction results. High-resolution transmission electron microscopy images in the vicinity of interfaces between the A1N and the sapphire indicated that atomic arrangement at an initial A1N growth stage influenced the total crystal quality.

Original language	English
Pages (from-to)	63-68
Number of pages	6
Journal	Journal of Crystal Growth
Volume	229
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01051-X
Publication status	Published - Jul 2 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)01051-X

Cite this

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title = "A1N epitaxial growth on off-angle R-plane sapphire substrates by MOCVD",

abstract = "A-plane (1 2 10) A1N films were deposited on the off-angle R-plane (1 1 0 2) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects. The polar direction of the A1N film was inverted by changing the sign of the off-angle and the off-angle was effective in restraining the generation of inverted twins in the A1N. A minus off-angle was found to improve total crystal quality of the A1N from X-ray diffraction results. High-resolution transmission electron microscopy images in the vicinity of interfaces between the A1N and the sapphire indicated that atomic arrangement at an initial A1N growth stage influenced the total crystal quality.",

author = "Tomohiko Shibata and Keiichiro Asai and Yukinori Nakamura and Mitsuhiro Tanaka and Kazuyuki Kaigawa and Junko Shibata and Hiroaki Sakai",

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T1 - A1N epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

AU - Shibata, Tomohiko

AU - Asai, Keiichiro

AU - Nakamura, Yukinori

AU - Tanaka, Mitsuhiro

AU - Kaigawa, Kazuyuki

AU - Shibata, Junko

AU - Sakai, Hiroaki

PY - 2001/7/2

Y1 - 2001/7/2

N2 - A-plane (1 2 10) A1N films were deposited on the off-angle R-plane (1 1 0 2) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects. The polar direction of the A1N film was inverted by changing the sign of the off-angle and the off-angle was effective in restraining the generation of inverted twins in the A1N. A minus off-angle was found to improve total crystal quality of the A1N from X-ray diffraction results. High-resolution transmission electron microscopy images in the vicinity of interfaces between the A1N and the sapphire indicated that atomic arrangement at an initial A1N growth stage influenced the total crystal quality.

AB - A-plane (1 2 10) A1N films were deposited on the off-angle R-plane (1 1 0 2) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects. The polar direction of the A1N film was inverted by changing the sign of the off-angle and the off-angle was effective in restraining the generation of inverted twins in the A1N. A minus off-angle was found to improve total crystal quality of the A1N from X-ray diffraction results. High-resolution transmission electron microscopy images in the vicinity of interfaces between the A1N and the sapphire indicated that atomic arrangement at an initial A1N growth stage influenced the total crystal quality.

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A1N epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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