A UV light-emitting diode incorporating GaN quantum dots

Satoru Tanaka, Jeong Sik Lee, Peter Ramvall, Hiroaki Okagawa

Research output: Contribution to journalLetterpeer-review

48 Citations (Scopus)


The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼ 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

Original languageEnglish
Pages (from-to)L885-L887
JournalJapanese Journal of Applied Physics
Issue number8 A
Publication statusPublished - Aug 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'A UV light-emitting diode incorporating GaN quantum dots'. Together they form a unique fingerprint.

Cite this