TY - JOUR
T1 - A trial of Fe(Se1-xTex) thin film fabrication by pulsed laser deposition using ArF excimer laser
AU - Yoshimoto, T.
AU - Ichino, Y.
AU - Yoshida, Y.
AU - Kiss, T.
AU - Inoue, M.
AU - Matsumoto, K.
AU - Ichinose, A.
AU - Kai, H.
AU - Teranishi, R.
AU - Mori, N.
AU - Mukaida, M.
PY - 2010
Y1 - 2010
N2 - We fabricated Fe(Se1-xTex) thin films on LSAT(100), MgO(001), R-Al2O3 substrates by ArF excimer pulsed laser deposition (ArF-PLD) and investigated pulse repetition rate dependence on film growth of Fe(Se1-xTex) thin films in ArF-PLD. Through x-ray diffraction measurements of Fe(Se1-xTex) thin films grown by ArF-PLD, 00l peaks of Fe(Se1-xTex) were confirmed in Fe(Se1-xTex) thin films grown by pulse repetition rate of 10 Hz but the 00l peaks were not confirmed in Fe(Se1-xTe x) thin films grown at 5 Hz. Atomic force microscopy (AFM) revealed that 100 ∼ 250 nm sized grains were formed on surface of the thin films grown at 10 Hz. It was found that the thin films grown at 5 Hz were formed thinner than those grown at 10 Hz, in spite of the same pulses. Energy dispersive x-ray spectroscopy (EDX) analysis revealed that composition elements of the thin films grown at 5 Hz were re-evaporated from them more than those grown at 10Hz. In ρ-T measurements of the thin films grown at 10 Hz, it was confirmed that the thin films has TConset = 6.5 ∼ 10.5 K and TC0 of the Fe(Se1-xTex) thin film on an MgO substrate is 3.9 K.
AB - We fabricated Fe(Se1-xTex) thin films on LSAT(100), MgO(001), R-Al2O3 substrates by ArF excimer pulsed laser deposition (ArF-PLD) and investigated pulse repetition rate dependence on film growth of Fe(Se1-xTex) thin films in ArF-PLD. Through x-ray diffraction measurements of Fe(Se1-xTex) thin films grown by ArF-PLD, 00l peaks of Fe(Se1-xTex) were confirmed in Fe(Se1-xTex) thin films grown by pulse repetition rate of 10 Hz but the 00l peaks were not confirmed in Fe(Se1-xTe x) thin films grown at 5 Hz. Atomic force microscopy (AFM) revealed that 100 ∼ 250 nm sized grains were formed on surface of the thin films grown at 10 Hz. It was found that the thin films grown at 5 Hz were formed thinner than those grown at 10 Hz, in spite of the same pulses. Energy dispersive x-ray spectroscopy (EDX) analysis revealed that composition elements of the thin films grown at 5 Hz were re-evaporated from them more than those grown at 10Hz. In ρ-T measurements of the thin films grown at 10 Hz, it was confirmed that the thin films has TConset = 6.5 ∼ 10.5 K and TC0 of the Fe(Se1-xTex) thin film on an MgO substrate is 3.9 K.
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U2 - 10.1088/1742-6596/234/1/012051
DO - 10.1088/1742-6596/234/1/012051
M3 - Article
AN - SCOPUS:78650880633
SN - 1742-6588
VL - 234
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - PART 1
M1 - 012051
ER -