TY - GEN
T1 - A survey of circuit configurations and experimental verification of a resonant gate drive circuit
AU - Noge, Yuichi
AU - Igarashi, Ryuichi
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/13
Y1 - 2016/7/13
N2 - In this paper, a survey of circuit configurations and experimental verification of resonant gate drive circuit are presented. Switching frequency of the power converter is increased. Therefore, power saving is required for driving power semiconductors in order to obtain the high power density. This paper looks back the development history of the resonant gate drive circuit from IEEE publications in 1987 to 2015. Then, the research elements for corresponding to the high-voltage and high-speed switching by next-generation power semiconductors has been considered by experiments.
AB - In this paper, a survey of circuit configurations and experimental verification of resonant gate drive circuit are presented. Switching frequency of the power converter is increased. Therefore, power saving is required for driving power semiconductors in order to obtain the high power density. This paper looks back the development history of the resonant gate drive circuit from IEEE publications in 1987 to 2015. Then, the research elements for corresponding to the high-voltage and high-speed switching by next-generation power semiconductors has been considered by experiments.
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U2 - 10.1109/IPEMC.2016.7512842
DO - 10.1109/IPEMC.2016.7512842
M3 - Conference contribution
AN - SCOPUS:84983359458
T3 - 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016
SP - 3408
EP - 3413
BT - 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016
Y2 - 22 May 2016 through 26 May 2016
ER -