TY - JOUR
T1 - A study of the doping dependence of Tc in Ba1- xKxFe2As2 and Sr1- xKxFe2As2 films grown by molecular beam epitaxy
AU - Yamagishi, T.
AU - Ueda, S.
AU - Takeda, S.
AU - Takano, S.
AU - Mitsuda, A.
AU - Naito, M.
N1 - Funding Information:
The authors thank Yoshi Krockenberger of NTT Basic Research Laboratories for critical reading of our manuscript. This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO).
PY - 2011/11
Y1 - 2011/11
N2 - Single-crystalline films of superconducting Ba1- xKxFe2As2 and Sr1- xKxFe2As2 were grown at temperatures below 350 °C under reduced As flux by molecular beam epitaxy. We performed a systematic study of the doping dependence of Tc in Ba 1-xKxFe2As2 for x = 0.0 to 1.0 and Sr1-xKxFe2As2 for x = 0.0 to 0.5. The highest Tcon (Tcend) so far attained is 38.3 K (35.5 K) at x ∼ 0.3 for Ba1-xKxFe2As 2, and 33.4 K (31.0 K) at x ∼ 0.4 for Sr1- xKxFe2As2. The optimum K-doping level inducing the highest Tc is different in the two systems. The implication of the results is briefly discussed.
AB - Single-crystalline films of superconducting Ba1- xKxFe2As2 and Sr1- xKxFe2As2 were grown at temperatures below 350 °C under reduced As flux by molecular beam epitaxy. We performed a systematic study of the doping dependence of Tc in Ba 1-xKxFe2As2 for x = 0.0 to 1.0 and Sr1-xKxFe2As2 for x = 0.0 to 0.5. The highest Tcon (Tcend) so far attained is 38.3 K (35.5 K) at x ∼ 0.3 for Ba1-xKxFe2As 2, and 33.4 K (31.0 K) at x ∼ 0.4 for Sr1- xKxFe2As2. The optimum K-doping level inducing the highest Tc is different in the two systems. The implication of the results is briefly discussed.
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U2 - 10.1016/j.physc.2011.05.152
DO - 10.1016/j.physc.2011.05.152
M3 - Article
AN - SCOPUS:80055019659
SN - 0921-4534
VL - 471
SP - 1177
EP - 1180
JO - Physica C: Superconductivity and its applications
JF - Physica C: Superconductivity and its applications
IS - 21-22
ER -