TY - GEN
T1 - A novel CMP process using the size-controllable polyhydroxylated fullerene cluster
AU - Tachika, H.
AU - Takaya, Y.
AU - Hayashi, T.
AU - Kokubo, K.
AU - Suzuki, K.
AU - Shirai, K.
PY - 2008
Y1 - 2008
N2 - We proposed a novel CMP process by using the poly-hydroxylated fullerene ( C60(OH)36 ). It is previously reported that the copper surface was improved from 16.5 nm RMS to 1 nm RMS using the C60(OH)36 molecule as an abrasive grain. However, the polishing rate is the drawback. Then, in this paper, the polishing rate was controlled using the size-controllable C60(OH)36 cluster from 1 to 200 nm by the UV laser irradiation. Consequently, the higher polishing rate (Max 300 nm/min) is achieved.
AB - We proposed a novel CMP process by using the poly-hydroxylated fullerene ( C60(OH)36 ). It is previously reported that the copper surface was improved from 16.5 nm RMS to 1 nm RMS using the C60(OH)36 molecule as an abrasive grain. However, the polishing rate is the drawback. Then, in this paper, the polishing rate was controlled using the size-controllable C60(OH)36 cluster from 1 to 200 nm by the UV laser irradiation. Consequently, the higher polishing rate (Max 300 nm/min) is achieved.
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M3 - Conference contribution
AN - SCOPUS:84908237721
T3 - Proceedings of the 10th Anniversary International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2008
SP - 460
EP - 464
BT - Proceedings of the 10th Anniversary International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2008
A2 - Van Brussel, Hendrik
A2 - Brinksmeier, E.
A2 - Spaan, H.
A2 - Burke, T.
PB - euspen
T2 - 10th Anniversary International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2008
Y2 - 18 May 2008 through 22 May 2008
ER -