TY - GEN
T1 - A MEMS digital mirror array integrated with high-voltage level-shifter
AU - Maruyama, S.
AU - Takahashi, K.
AU - Fujita, H.
AU - Toshiyoshi, H.
PY - 2009
Y1 - 2009
N2 - This paper reports the design, fabrication and demonstration of MEMS electrostatic digital mirror array (8 channels) integrated with 40V level-shifter drivers by the CMOS-first MEMS-last processing technique. A CMOS chip of high voltage level-shifter array (2.9 mm x 2.9 mm) was pre-fabricated on an 8-μm-thick SOI wafer, and micromechianical structures were post-processed by deep reactive ion etching (DRIE) in the nearby reticle area for monolithic integration. The mirror array has been developed for a fiber-optic wavelength selective switch (WSS) application.
AB - This paper reports the design, fabrication and demonstration of MEMS electrostatic digital mirror array (8 channels) integrated with 40V level-shifter drivers by the CMOS-first MEMS-last processing technique. A CMOS chip of high voltage level-shifter array (2.9 mm x 2.9 mm) was pre-fabricated on an 8-μm-thick SOI wafer, and micromechianical structures were post-processed by deep reactive ion etching (DRIE) in the nearby reticle area for monolithic integration. The mirror array has been developed for a fiber-optic wavelength selective switch (WSS) application.
UR - http://www.scopus.com/inward/record.url?scp=71449108668&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71449108668&partnerID=8YFLogxK
U2 - 10.1109/SENSOR.2009.5285899
DO - 10.1109/SENSOR.2009.5285899
M3 - Conference contribution
AN - SCOPUS:71449108668
SN - 9781424441938
T3 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
SP - 2314
EP - 2317
BT - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
T2 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Y2 - 21 June 2009 through 25 June 2009
ER -