A low power UWB low noise amplifier using current reused and feedback techniques

A. I.A. Galal, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.

Original languageEnglish
Pages (from-to)471-474
Number of pages4
JournalMicrowave and Optical Technology Letters
Issue number2
Publication statusPublished - Feb 1 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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