A heteroepitaxial perovskite metal-base transistor

Takeaki Yajima, Yasuyuki Hikita, Harold Y. Hwang

Research output: Contribution to journalArticlepeer-review

100 Citations (Scopus)


More than Moore ηtrade; captures a concept for overcoming limitationsin silicon electronics by incorporating new functionalitiesin the constituent materials. Perovskite oxides are candidates because of their vast array of physical properties in a common structure. They also enable new electronic devices based on strongly-correlated electrons. The field effect transistor and its derivatives have been the principal oxide devices investigated thus far, but another option is available in a different geometry: if the current is perpendicular to the interface, the strong internal electric fields generated at back-to-back heterojunctions can be used for oxide electronics, analogous to bipolar transistors. Here we demonstrate a perovskite heteroepitaxial metal-base transistor operating at room temperature, enabled by interface dipole engineering. Analysis of many devices quantifies the evolution from hot-electron to permeable-base behaviour. This device provides a platform for incorporating the exotic ground states of perovskite oxides, as well as novel electronic phases at their interfaces.

Original languageEnglish
Pages (from-to)198-201
Number of pages4
JournalNature Materials
Issue number3
Publication statusPublished - Mar 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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