A formation mechanism of carbon nanotube films on SiC(0001)

M. Kusunoki; T. Suzuki; T. Hirayama; N. Shibata; Kenji Kaneko

doi:10.1063/1.127034

A formation mechanism of carbon nanotube films on SiC(0001)

M. Kusunoki, T. Suzuki, T. Hirayama, N. Shibata, Kenji Kaneko

Research output: Contribution to journal › Article › peer-review

197 Citations (Scopus)

Abstract

We report a remarkable difference of decomposed structures on the Si(0001) and C(0001̄ faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

Original language	English
Pages (from-to)	531-533
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	4
DOIs	https://doi.org/10.1063/1.127034
Publication status	Published - Jul 24 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.127034

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AU - Kusunoki, M.

AU - Suzuki, T.

AU - Hirayama, T.

AU - Shibata, N.

AU - Kaneko, Kenji

PY - 2000/7/24

Y1 - 2000/7/24

N2 - We report a remarkable difference of decomposed structures on the Si(0001) and C(0001̄ faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

AB - We report a remarkable difference of decomposed structures on the Si(0001) and C(0001̄ faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

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A formation mechanism of carbon nanotube films on SiC(0001)

Abstract

All Science Journal Classification (ASJC) codes

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