A field-induced semiconductor quantum dot defined by a single metallic front-gate

A. Richter, K. Matsuda, Y. Harada, H. Tamura, T. Akazaki, Y. Hirayama, H. Takayanagi

Research output: Contribution to journalConference articlepeer-review


We present studies on the electronic transport in a quantum dot based on a back-gated undoped GaAs/AlGaAs heterostructure. A high-quality two-dimensional electron gas can be induced in the structure by applying a back-gate voltage. The quantum dot is well defined by means of a single metallic frontgate. We observe clear regions of Coulomb blockade and pronounced tunneling peaks in a broad range of source-drain and front-gate voltages. The formation of the quantum dot and energetic evolution of the associated tunneling peaks are studied as a function of the applied front-gate voltage. Excellent agreement to the calculated Coulomb diamond pattern using the 'constant interaction model' is achieved, if a front-gate voltage dependent change of the dot capacitance is taken into account.

Original languageEnglish
Pages (from-to)1317-1320
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
Publication statusPublished - 2003
Externally publishedYes
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: Sept 30 2002Oct 3 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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