We present studies on the electronic transport in a quantum dot based on a back-gated undoped GaAs/AlGaAs heterostructure. A high-quality two-dimensional electron gas can be induced in the structure by applying a back-gate voltage. The quantum dot is well defined by means of a single metallic frontgate. We observe clear regions of Coulomb blockade and pronounced tunneling peaks in a broad range of source-drain and front-gate voltages. The formation of the quantum dot and energetic evolution of the associated tunneling peaks are studied as a function of the applied front-gate voltage. Excellent agreement to the calculated Coulomb diamond pattern using the 'constant interaction model' is achieved, if a front-gate voltage dependent change of the dot capacitance is taken into account.
|Number of pages
|Physica Status Solidi C: Conferences
|Published - 2003
|2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: Sept 30 2002 → Oct 3 2002
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics