A DC-to-100-GHz InP HEMT 1: 2 Distributor IC using distributed amplification

Yuhki Imai; Shunji Kimura; Takatomo Enoki; Yohtaro Umeda

doi:10.1109/75.502285

A DC-to-100-GHz InP HEMT 1: 2 Distributor IC using distributed amplification

Yuhki Imai, Shunji Kimura, Takatomo Enoki, Yohtaro Umeda

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

This letter describes a 1 : 2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs/InGaAs/InP HEMT and a coplanar-waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low-frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB. We believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.

Original language	English
Pages (from-to)	256-258
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	6
Issue number	7
DOIs	https://doi.org/10.1109/75.502285
Publication status	Published - Jul 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1109/75.502285

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abstract = "This letter describes a 1 : 2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs/InGaAs/InP HEMT and a coplanar-waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low-frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB. We believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.",

author = "Yuhki Imai and Shunji Kimura and Takatomo Enoki and Yohtaro Umeda",

year = "1996",

month = jul,

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AU - Kimura, Shunji

AU - Enoki, Takatomo

AU - Umeda, Yohtaro

PY - 1996/7

Y1 - 1996/7

N2 - This letter describes a 1 : 2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs/InGaAs/InP HEMT and a coplanar-waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low-frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB. We believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.

AB - This letter describes a 1 : 2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs/InGaAs/InP HEMT and a coplanar-waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low-frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB. We believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.

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A DC-to-100-GHz InP HEMT 1: 2 Distributor IC using distributed amplification

Abstract

All Science Journal Classification (ASJC) codes

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