A combination of boron getterin and phosphorous gettering in Fe-contaminated n+pp+bifaicial silicon cells

Toshio Joge, Ichiro Araki, Hiroshi Nakashima, Kunihiro Mateukuma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A low temperature boron gettering induced by preceded boron diffusion improves effectively the lifetime of Fe-contaminated n+pp+ BSF cells with cooperating preceded phosphorous gettering. The combination with two gettering increased stably the lifetimes to initial high lifetimes, The simulated lifetimes through the cell process using Fe-behavior parameters showed good consistency with measured lifetimes by micro-PCD method and measured concentration of FeB pair by DLTS analysis.

    Original languageEnglish
    Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
    Pages1455-1458
    Number of pages4
    Publication statusPublished - 2003
    EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
    Duration: May 11 2003May 18 2003

    Publication series

    NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
    VolumeB

    Other

    OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    Country/TerritoryJapan
    CityOsaka
    Period5/11/035/18/03

    All Science Journal Classification (ASJC) codes

    • General Engineering

    Fingerprint

    Dive into the research topics of 'A combination of boron getterin and phosphorous gettering in Fe-contaminated n+pp+bifaicial silicon cells'. Together they form a unique fingerprint.

    Cite this