TY - GEN
T1 - A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache
AU - Kunitake, Yuji
AU - Sato, Toshinori
AU - Yasuura, Hiroto
PY - 2010
Y1 - 2010
N2 - Negative Bias Temperature Instability (NBTI) is one of the major reliability problems in advanced technologies. NBTI causes threshold voltage shift in a PMOS transistor which is biased to negative voltage. In an SRAM cell, due to NBTI, threshold voltage shifts in the load transistors. The degradation has the impact on Static Noise Margin (SNM), which is a measure of read stability of a 6-T SRAM cell. Because an SRAM cell consists of two inverters, one of the load transistors is always stressed. In order to mitigate NBTI degradation, we proposed Short Term Cell-Flipping technique (STCF) for SRAM cell. This technique makes the stress probability on load transistors in an SRAM cell close to 50%. In this paper, we apply STCF technique to cache memories, and discuss its potential to mitigate NBTI degradation.
AB - Negative Bias Temperature Instability (NBTI) is one of the major reliability problems in advanced technologies. NBTI causes threshold voltage shift in a PMOS transistor which is biased to negative voltage. In an SRAM cell, due to NBTI, threshold voltage shifts in the load transistors. The degradation has the impact on Static Noise Margin (SNM), which is a measure of read stability of a 6-T SRAM cell. Because an SRAM cell consists of two inverters, one of the load transistors is always stressed. In order to mitigate NBTI degradation, we proposed Short Term Cell-Flipping technique (STCF) for SRAM cell. This technique makes the stress probability on load transistors in an SRAM cell close to 50%. In this paper, we apply STCF technique to cache memories, and discuss its potential to mitigate NBTI degradation.
UR - http://www.scopus.com/inward/record.url?scp=77956550860&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956550860&partnerID=8YFLogxK
U2 - 10.1109/ASQED.2010.5548256
DO - 10.1109/ASQED.2010.5548256
M3 - Conference contribution
AN - SCOPUS:77956550860
SN - 9781424478088
T3 - Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010
SP - 301
EP - 307
BT - Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010
T2 - 2nd Asia Symposium on Quality Electronic Design, ASQED 2010
Y2 - 3 August 2010 through 4 August 2010
ER -