TY - GEN
T1 - A 25-Gb/s 480-mW CMOS modulator driver using area-efficient 3D inductor peaking
AU - Nakano, Shinsuke
AU - Nogawa, Masafumi
AU - Nosaka, Hideyuki
AU - Tsuchiya, Akira
AU - Onodera, Hidetoshi
AU - Kimura, Shunji
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2016/1/19
Y1 - 2016/1/19
N2 - We propose a low-power and compact 25-Gb/s differential CMOS modulator driver. To achieve low power consumption, we employ an output driver with a high-gain single-stage amplifier and a gainless pre-driver with an equalizer function. In the pre-driver, we use area-efficient 3D inductors for the inductor peaking technique to obtain the equalizer function with compactness. We also employ a cascode amplifier consisting of high-voltage and standard MOSFETs to output a large voltage swing in CMOS technology. The proposed driver was fabricated in 65-nm 1P9M standard CMOS. It exhibits a data rate of 25 Gb/s, a differential output swing of 3.3 Vpp with an input swing of 300 mVpp, and power consumption of 480 mW with 1.2-/3.3-V dual supplies. The active area is only 0.029 mm2, including all inductors. The results indicate that the best power efficiency, which is 26 % better than the state of the art, and good power consumption versus output swing FoM (mW/Vpp) are achieved.
AB - We propose a low-power and compact 25-Gb/s differential CMOS modulator driver. To achieve low power consumption, we employ an output driver with a high-gain single-stage amplifier and a gainless pre-driver with an equalizer function. In the pre-driver, we use area-efficient 3D inductors for the inductor peaking technique to obtain the equalizer function with compactness. We also employ a cascode amplifier consisting of high-voltage and standard MOSFETs to output a large voltage swing in CMOS technology. The proposed driver was fabricated in 65-nm 1P9M standard CMOS. It exhibits a data rate of 25 Gb/s, a differential output swing of 3.3 Vpp with an input swing of 300 mVpp, and power consumption of 480 mW with 1.2-/3.3-V dual supplies. The active area is only 0.029 mm2, including all inductors. The results indicate that the best power efficiency, which is 26 % better than the state of the art, and good power consumption versus output swing FoM (mW/Vpp) are achieved.
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U2 - 10.1109/ASSCC.2015.7387470
DO - 10.1109/ASSCC.2015.7387470
M3 - Conference contribution
AN - SCOPUS:84963849983
T3 - 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings
BT - 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE Asian Solid-State Circuits Conference, A-SSCC 2015
Y2 - 9 November 2015 through 11 November 2015
ER -