A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

Masafumi Nogawa, Kazuyoshi Nishimura, Shunji Kimura, Tomoaki Yoshida, Tomoaki Kawamura, Minoru Togashi, Kiyomi Kumozaki, Yusuke Ohtomo

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


A 10Gb/s burst-mode CDR IC that is eight times faster than previous burst-mode ICs is fabricated in a 0.13μm CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5UIs with a gated oscillator, It consumes 1.2W from a 2.5V supply.

Original languageEnglish
Article number12.5
Pages (from-to)178-179+589
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2005
Externally publishedYes
Event2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: Feb 6 2005Feb 10 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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