A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

Masafumi Nogawa; Kazuyoshi Nishimura; Shunji Kimura; Tomoaki Yoshida; Tomoaki Kawamura; Minoru Togashi; Kiyomi Kumozaki; Yusuke Ohtomo

A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

Masafumi Nogawa, Kazuyoshi Nishimura, Shunji Kimura, Tomoaki Yoshida, Tomoaki Kawamura, Minoru Togashi, Kiyomi Kumozaki, Yusuke Ohtomo

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

A 10Gb/s burst-mode CDR IC that is eight times faster than previous burst-mode ICs is fabricated in a 0.13μm CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5UIs with a gated oscillator, It consumes 1.2W from a 2.5V supply.

Original language	English
Article number	12.5
Pages (from-to)	178-179+589
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	48
Publication status	Published - 2005
Externally published	Yes
Event	2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States Duration: Feb 6 2005 → Feb 10 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "A 10Gb/s burst-mode CDR IC in 0.13μm CMOS",

abstract = "A 10Gb/s burst-mode CDR IC that is eight times faster than previous burst-mode ICs is fabricated in a 0.13μm CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5UIs with a gated oscillator, It consumes 1.2W from a 2.5V supply.",

author = "Masafumi Nogawa and Kazuyoshi Nishimura and Shunji Kimura and Tomoaki Yoshida and Tomoaki Kawamura and Minoru Togashi and Kiyomi Kumozaki and Yusuke Ohtomo",

year = "2005",

language = "English",

volume = "48",

pages = "178--179+589",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 IEEE International Solid-State Circuits Conference, ISSCC ; Conference date: 06-02-2005 Through 10-02-2005",

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TY - JOUR

T1 - A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

AU - Nogawa, Masafumi

AU - Nishimura, Kazuyoshi

AU - Kimura, Shunji

AU - Yoshida, Tomoaki

AU - Kawamura, Tomoaki

AU - Togashi, Minoru

AU - Kumozaki, Kiyomi

AU - Ohtomo, Yusuke

PY - 2005

Y1 - 2005

N2 - A 10Gb/s burst-mode CDR IC that is eight times faster than previous burst-mode ICs is fabricated in a 0.13μm CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5UIs with a gated oscillator, It consumes 1.2W from a 2.5V supply.

AB - A 10Gb/s burst-mode CDR IC that is eight times faster than previous burst-mode ICs is fabricated in a 0.13μm CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5UIs with a gated oscillator, It consumes 1.2W from a 2.5V supply.

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M3 - Conference article

AN - SCOPUS:28144438540

SN - 0193-6530

VL - 48

SP - 178-179+589

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

M1 - 12.5

T2 - 2005 IEEE International Solid-State Circuits Conference, ISSCC

Y2 - 6 February 2005 through 10 February 2005

ER -

A 10Gb/s burst-mode CDR IC in 0.13μm CMOS

Abstract

All Science Journal Classification (ASJC) codes

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