A 10Gb/s burst-mode CDR IC that is eight times faster than previous burst-mode ICs is fabricated in a 0.13μm CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5UIs with a gated oscillator, It consumes 1.2W from a 2.5V supply.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Publication status||Published - 2005|
|Event||2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States|
Duration: Feb 6 2005 → Feb 10 2005
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering