TY - GEN
T1 - A 0.18 μm CMOS current reuse ultra-wideband low noise amplifier (UWB-LNA) with minimized group delay variations
AU - Yousef, K.
AU - Jia, H.
AU - Pokharel, R.
AU - Allam, A.
AU - Ragab, M.
AU - Kanaya, H.
N1 - Publisher Copyright:
© 2014 European Microwave Association.
PY - 2014/12/15
Y1 - 2014/12/15
N2 - This paper presents the design of a CMOS low noise amplifier (LNA) with minimized group delay variations and optimized noise performance for ultra-wideband (UWB) applications. The proposed LNA employs a common source based current reuse topology. Through this configuration gain flatness of 12.25± 0.25 with noise figure (NF) less than 3.8 dB are achieved. This LNA achieves group delay variation of ±25 ps using the standard 0.18 μm CMOS technology. Weak Capacitive-Resistive shunt feedback technique is implemented across the input stage for wideband input matching. Series peaking with output resistive termination are adopted for group delay variations optimization. This UWB LNA has a measured 1dB compression point (P1dB) and an input third-order inter-modulation point (IIP3) of-7.0 dBm and 2.5 dBm respectively at 5.5 GHz. The implemented UWB LNA chip area is only 560 μm × 590 μm.
AB - This paper presents the design of a CMOS low noise amplifier (LNA) with minimized group delay variations and optimized noise performance for ultra-wideband (UWB) applications. The proposed LNA employs a common source based current reuse topology. Through this configuration gain flatness of 12.25± 0.25 with noise figure (NF) less than 3.8 dB are achieved. This LNA achieves group delay variation of ±25 ps using the standard 0.18 μm CMOS technology. Weak Capacitive-Resistive shunt feedback technique is implemented across the input stage for wideband input matching. Series peaking with output resistive termination are adopted for group delay variations optimization. This UWB LNA has a measured 1dB compression point (P1dB) and an input third-order inter-modulation point (IIP3) of-7.0 dBm and 2.5 dBm respectively at 5.5 GHz. The implemented UWB LNA chip area is only 560 μm × 590 μm.
UR - http://www.scopus.com/inward/record.url?scp=84929230994&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84929230994&partnerID=8YFLogxK
U2 - 10.1109/EuMC.2014.6986705
DO - 10.1109/EuMC.2014.6986705
M3 - Conference contribution
AN - SCOPUS:84929230994
T3 - European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
SP - 1392
EP - 1395
BT - European Microwave Week 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Y2 - 6 October 2014 through 9 October 2014
ER -