TY - GEN
T1 - 5GHz-band CMOS class-E power amplifier module considering wire bonding
AU - Kanaya, Haruichi
N1 - Funding Information:
This work was partly supported by a grant of Regional Innovation Cluster Program (Global Type 2nd Stage) from Ministry of Education, Culture, Sports, Science and Technology, and KAKENHI (25420334) from Japan Society for the Promotion of Science.
Publisher Copyright:
© 2015 IEEE.
PY - 2016/1/8
Y1 - 2016/1/8
N2 - This paper presents a high-efficient 0.18μm CMOS class-E power amplifier (PA) for 5GHz wireless transmitter applications using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique to reduce required input power. This PA was placed on the lead frame and molded in the packaging for transmitter application. In our design, bonding wires are optimized by using EM simulation. And the coplanar waveguide structure in the RF port was composed of bonding wires. Our PA module is composed of PA in package, PCB, DC cable and SMA connectors. This PA module has a measured PAE = 41.0 %.
AB - This paper presents a high-efficient 0.18μm CMOS class-E power amplifier (PA) for 5GHz wireless transmitter applications using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique to reduce required input power. This PA was placed on the lead frame and molded in the packaging for transmitter application. In our design, bonding wires are optimized by using EM simulation. And the coplanar waveguide structure in the RF port was composed of bonding wires. Our PA module is composed of PA in package, PCB, DC cable and SMA connectors. This PA module has a measured PAE = 41.0 %.
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U2 - 10.1109/RFIT.2015.7377919
DO - 10.1109/RFIT.2015.7377919
M3 - Conference contribution
AN - SCOPUS:84962909893
T3 - 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
SP - 157
EP - 159
BT - 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
Y2 - 26 August 2015 through 28 August 2015
ER -