500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

Isao Tsunoda; Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1557/proc-744-m8.22

500°C formation of poly-Si_1-xGe_x (x ≥ 0.5) on SiO₂ by ion-beam stimulated solid phase crystallization

Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ion beam stimulated solid phase crystallization of a-Si_1-xGe_x (0 ≤ x ≤ 1) on SiO₂ has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si_1-xGe_x with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

Original language	English
Pages (from-to)	501-505
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	744
DOIs	https://doi.org/10.1557/proc-744-m8.22
Publication status	Published - 2002
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: Dec 2 2002 → Dec 5 2002

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-744-m8.22

Cite this

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title = "500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization",

abstract = "Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.",

author = "Isao Tsunoda and Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Science, and Technology of Japan.; Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

year = "2002",

doi = "10.1557/proc-744-m8.22",

language = "English",

volume = "744",

pages = "501--505",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - 500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

AU - Tsunoda, Isao

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Science, and Technology of Japan.

PY - 2002

Y1 - 2002

N2 - Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

AB - Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

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U2 - 10.1557/proc-744-m8.22

DO - 10.1557/proc-744-m8.22

M3 - Conference article

AN - SCOPUS:0038826256

SN - 0272-9172

VL - 744

SP - 501

EP - 505

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

500°C formation of poly-Si_1-xGe_x (x ≥ 0.5) on SiO₂ by ion-beam stimulated solid phase crystallization

Abstract

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