4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Kazuto Takao; Keiji Wada; Kyungmin Sung; Yuji Mastuoka; Yasunori Tanaka; Shinichi Nishizawa; Takeo Kanai; Takashi Shinohe; Hiromichi Ohashi

doi:10.1109/ICEPE-ST.2013.6804322

4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

A 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module has been developed for realizing high switching frequency operations of medium-voltage power converters. The maximum switching frequency of the hybrid pair module is theoretically analyzed from viewpoints of cooling capacity of the heat sink and the minimum pulse width of a PWM signal. Operation tests of the hybrid pair module are implemented and 10 kHz operation has been successfully demonstrated.

Original language	English
DOIs	https://doi.org/10.1109/ICEPE-ST.2013.6804322
Publication status	Published - Jan 1 2013
Externally published	Yes
Event	2013 2nd International Conference on Electric Power Equipment - Switching Technology, ICEPE-ST 2013 - Matsue, Japan Duration: Oct 20 2013 → Oct 23 2013

Other

Other	2013 2nd International Conference on Electric Power Equipment - Switching Technology, ICEPE-ST 2013
Country/Territory	Japan
City	Matsue
Period	10/20/13 → 10/23/13

All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology

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10.1109/ICEPE-ST.2013.6804322

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Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Kanai, T., Shinohe, T., & Ohashi, H. (2013). 4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation. Paper presented at 2013 2nd International Conference on Electric Power Equipment - Switching Technology, ICEPE-ST 2013, Matsue, Japan. https://doi.org/10.1109/ICEPE-ST.2013.6804322

Takao, K, Wada, K, Sung, K, Mastuoka, Y, Tanaka, Y, Nishizawa, S, Kanai, T, Shinohe, T & Ohashi, H 2013, '4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation', Paper presented at 2013 2nd International Conference on Electric Power Equipment - Switching Technology, ICEPE-ST 2013, Matsue, Japan, 10/20/13 - 10/23/13. https://doi.org/10.1109/ICEPE-ST.2013.6804322

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author = "Kazuto Takao and Keiji Wada and Kyungmin Sung and Yuji Mastuoka and Yasunori Tanaka and Shinichi Nishizawa and Takeo Kanai and Takashi Shinohe and Hiromichi Ohashi",

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doi = "10.1109/ICEPE-ST.2013.6804322",

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T1 - 4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

AU - Takao, Kazuto

AU - Wada, Keiji

AU - Sung, Kyungmin

AU - Mastuoka, Yuji

AU - Tanaka, Yasunori

AU - Nishizawa, Shinichi

AU - Kanai, Takeo

AU - Shinohe, Takashi

AU - Ohashi, Hiromichi

PY - 2013/1/1

Y1 - 2013/1/1

N2 - A 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module has been developed for realizing high switching frequency operations of medium-voltage power converters. The maximum switching frequency of the hybrid pair module is theoretically analyzed from viewpoints of cooling capacity of the heat sink and the minimum pulse width of a PWM signal. Operation tests of the hybrid pair module are implemented and 10 kHz operation has been successfully demonstrated.

AB - A 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module has been developed for realizing high switching frequency operations of medium-voltage power converters. The maximum switching frequency of the hybrid pair module is theoretically analyzed from viewpoints of cooling capacity of the heat sink and the minimum pulse width of a PWM signal. Operation tests of the hybrid pair module are implemented and 10 kHz operation has been successfully demonstrated.

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T2 - 2013 2nd International Conference on Electric Power Equipment - Switching Technology, ICEPE-ST 2013

Y2 - 20 October 2013 through 23 October 2013

ER -

4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Abstract

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