400 °c Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

Hiroshi Kanno; Tomohisa Aoki; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.mssp.2004.09.060

400 °c Formation of poly-SiGe on SiO₂ by Au-induced lateral crystallization

Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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Abstract

Au-induced low-temperature (400 °C) crystallization of amorphous-Si_1-xGe_x (x: 0-1) thin films on SiO₂ has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si_1-xGe_x with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.

Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.060
Publication status	Published - Feb 2005

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2004.09.060

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title = "400 °c Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization",

abstract = "Au-induced low-temperature (400 °C) crystallization of amorphous-Si1-xGex (x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si1-xGex with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.",

author = "Hiroshi Kanno and Tomohisa Aoki and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2005",

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doi = "10.1016/j.mssp.2004.09.060",

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T1 - 400 °c Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

AU - Kanno, Hiroshi

AU - Aoki, Tomohisa

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2005/2

Y1 - 2005/2

N2 - Au-induced low-temperature (400 °C) crystallization of amorphous-Si1-xGex (x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si1-xGex with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.

AB - Au-induced low-temperature (400 °C) crystallization of amorphous-Si1-xGex (x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si1-xGex with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.

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DO - 10.1016/j.mssp.2004.09.060

M3 - Article

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JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3 SPEC. ISS.

ER -

400 °c Formation of poly-SiGe on SiO₂ by Au-induced lateral crystallization

Abstract

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