40-Gb/s IC's for future lightwave communications systems

Taiichii Otsuji, Yuhki Imai, Eiichi Sano, Shunji Kimura, Satoshi Yamaguchi, Mikio Yoneyama, Takatomo Enoki, Yohtaro Umeda

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.

Original languageEnglish
Pages (from-to)1363-1369
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Issue number9
Publication statusPublished - Sept 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


Dive into the research topics of '40-Gb/s IC's for future lightwave communications systems'. Together they form a unique fingerprint.

Cite this