TY - JOUR
T1 - 3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells
AU - Chen, X. J.
AU - Nakano, S.
AU - Kakimoto, K.
N1 - Funding Information:
This work was supported by Program for New Century Excellent Talents in University ( NCET-09-0634 ) and the Fundamental Research Funds for the Central Universities of China .
PY - 2011/3/1
Y1 - 2011/3/1
N2 - We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.
AB - We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.
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U2 - 10.1016/j.jcrysgro.2010.10.067
DO - 10.1016/j.jcrysgro.2010.10.067
M3 - Article
AN - SCOPUS:79952735749
SN - 0022-0248
VL - 318
SP - 259
EP - 264
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -