TY - JOUR
T1 - 3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth
AU - Han, Xue Feng
AU - Liu, Xin
AU - Nakano, Satoshi
AU - Harada, Hirofumi
AU - Miyamura, Yoshiji
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/5
Y1 - 2018/5
N2 - In this paper, a three-dimensional global heat transfer model to describe the floating zone of silicon single-crystal growth is proposed. The steady-state calculations considering argon gas flow, feed rod, silicon melt and crystal are carried out using open source software OpenFOAM with no assumptions of symmetry. From the global calculation, a three dimensional solid-liquid interface has been obtained. Furthermore, the cooling effect of gas flow in three dimensions is considered, and the three-dimensional current-density distribution of the inductor is calculated. By considering the asymmetrical electromagnetic field induced by the inductor, the calculations reveal a deflection of the asymmetrical solid-liquid interface.
AB - In this paper, a three-dimensional global heat transfer model to describe the floating zone of silicon single-crystal growth is proposed. The steady-state calculations considering argon gas flow, feed rod, silicon melt and crystal are carried out using open source software OpenFOAM with no assumptions of symmetry. From the global calculation, a three dimensional solid-liquid interface has been obtained. Furthermore, the cooling effect of gas flow in three dimensions is considered, and the three-dimensional current-density distribution of the inductor is calculated. By considering the asymmetrical electromagnetic field induced by the inductor, the calculations reveal a deflection of the asymmetrical solid-liquid interface.
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U2 - 10.1002/crat.201700246
DO - 10.1002/crat.201700246
M3 - Article
AN - SCOPUS:85041575951
SN - 0232-1300
VL - 53
JO - Crystal Research and Technology
JF - Crystal Research and Technology
IS - 5
M1 - 1700246
ER -