Abstract
Three-dimensional global simulations were carried out for a small Czochralski furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field with rotating crucible and crystal. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three-dimensionally conjugated way. Three-dimensional distributions of temperature and velocity were analyzed. The melt-crystal interface was found to have nearly rotational symmetry, and the azimuthal non-uniformity of temperature is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 347-351 |
| Number of pages | 5 |
| Journal | Crystal Research and Technology |
| Volume | 40 |
| Issue number | 4-5 |
| DOIs | |
| Publication status | Published - Apr 2005 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics