3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

T. Saraya; K. Itou; T. Takakura; M. Fukui; S. Suzuki; K. Takeuchi; M. Tsukuda; K. Satoh; T. Matsudai; K. Kakushima; T. Hoshii; K. Tsutsui; H. Iwai; A. Ogura; W. Saito; S. Nishizawa; I. Omura; H. Ohashi; T. Hiramoto

doi:10.1109/IEDM13553.2020.9371909

3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5.3.1-5.3.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371909
Publication status	Published - Dec 12 2020
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: Dec 12 2020 → Dec 18 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 12/18/20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM13553.2020.9371909

Cite this

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Satoh, K., Matsudai, T., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S., Omura, I., Ohashi, H., & Hiramoto, T. (2020). 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 5.3.1-5.3.4). Article 9371909 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371909

3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology. / Saraya, T.; Itou, K.; Takakura, T. et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 5.3.1-5.3.4 9371909 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saraya, T, Itou, K, Takakura, T, Fukui, M, Suzuki, S, Takeuchi, K, Tsukuda, M, Satoh, K, Matsudai, T, Kakushima, K, Hoshii, T, Tsutsui, K, Iwai, H, Ogura, A, Saito, W , Nishizawa, S, Omura, I, Ohashi, H & Hiramoto, T 2020, 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371909, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 5.3.1-5.3.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371909

Saraya T, Itou K, Takakura T, Fukui M, Suzuki S, Takeuchi K et al. 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 5.3.1-5.3.4. 9371909. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371909

@inproceedings{2632f91ae1624171b042afd8915f6206,

title = "3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology",

abstract = "Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.",

author = "T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and K. Satoh and T. Matsudai and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and A. Ogura and W. Saito and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9371909",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "5.3.1--5.3.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "United States",

}

TY - GEN

T1 - 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

AU - Saraya, T.

AU - Itou, K.

AU - Takakura, T.

AU - Fukui, M.

AU - Suzuki, S.

AU - Takeuchi, K.

AU - Tsukuda, M.

AU - Satoh, K.

AU - Matsudai, T.

AU - Kakushima, K.

AU - Hoshii, T.

AU - Tsutsui, K.

AU - Iwai, H.

AU - Ogura, A.

AU - Saito, W.

AU - Nishizawa, S.

AU - Omura, I.

AU - Ohashi, H.

AU - Hiramoto, T.

PY - 2020/12/12

Y1 - 2020/12/12

N2 - Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.

AB - Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.

UR - http://www.scopus.com/inward/record.url?scp=85102955355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85102955355&partnerID=8YFLogxK

U2 - 10.1109/IEDM13553.2020.9371909

DO - 10.1109/IEDM13553.2020.9371909

M3 - Conference contribution

AN - SCOPUS:85102955355

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 5.3.1-5.3.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this