22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

K. Kato; S. Hata; A. Kozen; S. Oku; S. Matsumoto; J. Yoshida

doi:10.1049/el:19920719

22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

K. Kato, S. Hata, A. Kozen, S. Oku, S. Matsumoto, J. Yoshida

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A novel butt-joint structure employing SiO₂ sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

Original language	English
Pages (from-to)	1140-1142
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1049/el:19920719
Publication status	Published - Jun 4 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19920719

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@article{644108a8e8fe495ebf07a0b2bdd30f01,

title = "22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure",

abstract = "A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.",

author = "K. Kato and S. Hata and A. Kozen and S. Oku and S. Matsumoto and J. Yoshida",

year = "1992",

month = jun,

day = "4",

doi = "10.1049/el:19920719",

language = "English",

volume = "28",

pages = "1140--1142",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "12",

}

TY - JOUR

T1 - 22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

AU - Kato, K.

AU - Hata, S.

AU - Kozen, A.

AU - Oku, S.

AU - Matsumoto, S.

AU - Yoshida, J.

PY - 1992/6/4

Y1 - 1992/6/4

N2 - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

AB - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

UR - http://www.scopus.com/inward/record.url?scp=0027111509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027111509&partnerID=8YFLogxK

U2 - 10.1049/el:19920719

DO - 10.1049/el:19920719

M3 - Article

AN - SCOPUS:0027111509

SN - 0013-5194

VL - 28

SP - 1140

EP - 1142

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

Abstract

All Science Journal Classification (ASJC) codes

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