(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Jong Hyeok Park; Tsuneharu Suzuki; Masashi Kurosawa; Masanobu Miyao; Taizoh Sadoh

(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Jong Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.

Original language	English
Title of host publication	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Publisher	IEEE Computer Society
Pages	231-234
Number of pages	4
ISBN (Print)	9781467303996
Publication status	Published - 2012
Event	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan Duration: Jul 4 2012 → Jul 6 2012

Publication series

Name	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country/Territory	Japan
City	Kyoto
Period	7/4/12 → 7/6/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M., & Sadoh, T. (2012). (111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 231-234). Article 6294891 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012). IEEE Computer Society.

(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion. / Park, Jong Hyeok; Suzuki, Tsuneharu; Kurosawa, Masashi et al.
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. IEEE Computer Society, 2012. p. 231-234 6294891 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, JH, Suzuki, T, Kurosawa, M, Miyao, M & Sadoh, T 2012, (111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion. in Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294891, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, IEEE Computer Society, pp. 231-234, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japan, 7/4/12.

Park JH, Suzuki T, Kurosawa M, Miyao M, Sadoh T. (111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. IEEE Computer Society. 2012. p. 231-234. 6294891. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Park, Jong Hyeok ; Suzuki, Tsuneharu ; Kurosawa, Masashi et al. / (111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. IEEE Computer Society, 2012. pp. 231-234 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

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title = "(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion",

abstract = "Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.",

author = "Park, {Jong Hyeok} and Tsuneharu Suzuki and Masashi Kurosawa and Masanobu Miyao and Taizoh Sadoh",

note = "Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 ; Conference date: 04-07-2012 Through 06-07-2012",

year = "2012",

language = "English",

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AU - Park, Jong Hyeok

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AU - Miyao, Masanobu

AU - Sadoh, Taizoh

PY - 2012

Y1 - 2012

N2 - Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.

AB - Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.

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BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

PB - IEEE Computer Society

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ER -

(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

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